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IR1011 ASI10633 05111 44ACP CSDA1BA TDE1747 0805C 2EZ180
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  i, o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 rectifiers high efficiency, 2.5a u esi 101 byv27-50 ues1102 byv27-100 ues1103 byv27-150 features ? very fast recovery times ? very low forward voltage ? small size ? convenient package description an axial leaded power rectifier useful in many switching applications. particularly suited where very fast recovery and low forward voltage are required. absolute maximum ratings ues1101 ues1102 ue31103 syvz7.50 bw27-100 byv27-j50 peak inverse voltage. vh 50v 100v ... 150v 50v 100v 150v maximum average d.c. output at tl = 75c, l - %", i0 2.5a 2.0a non-repetitive surge current at 8.3ms, ifsm 35a 50a tnermal resistance at l = v, "?? 38'c/w 46c/w junction operating temperature, t, 175c 165c operating and storage temperature range -55'c to +175"c electrical specifications type ues1101 u esi 102 ues1103 byv27-50 byv27-100 byv27-150 maximum reverse voltage vn 50v 100v 150v 50v 100v 150v maximum forward voltage @ tj = 25c .975v & 2a t., = 25c 1.25v <8> 5* tj = 100c .895v & 2a tj = 165?c ,85v 6> 2.5a maximum reverse current @ ratt'd vb t, = 25 c 2^a l = 25"c l^a tj - 100c 50^a tj = 165c 150,/a maainiuitt reverse recovery time* 25ns 25ns ?measured in circuit u * '/.a, !? 1.0a. imc - 'aa mechanical specifications u esi 100 series band indicates byv27 series cathode end . .155 typ \ 1 39mm .085 max. \m jf| . * * * 700 mim^ .250 max. 17.8mm 6.35mm 1.625 min. * 41.3mm * 1 ,q30t.001 077mm .03 .055 typ. 1.4mm body a nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to.be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors


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